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Power Transistors 2SD2018 Silicon NPN epitaxial planar type Unit: mm For low-frequency amplification 3.160.1 8.0+0.5 -0.1 3.20.2 3.80.3 11.00.5 Features * High forward current transfer ratio hFE * Built-in 60 V Zener diode between base to collector * Darlington connection 1.90.1 Absolute Maximum Ratings TC = 25C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Collector power dissipation TC = 25C Ta = 25C * Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating +25 60 -10 +25 60 -10 Unit V V V A A W C C 0.750.1 4.60.2 0.50.1 0.50.1 2.30.2 3 1.760.1 5 1 1.5 1.2 5.0 150 -55 to +150 1 2 Internal Connection C B Junction temperature Storage temperature Note) * With a 100 x 100 x 2 mm Al heat sink 16.01.0 1: Emitter 2: Collector 3: Base TO-126B-A1 Package R1 R2 E Electrical Characteristics TC = 25C 3C Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current DC current gain * Collector to emitter saturation voltage * Base to emitter saturation voltage * Note) * Pulse measurement Symbol VCBO VCEO ICBO IEBO hFE VCE(sat) VBE(sat) Conditions IC = 100 A, IE = 0 IC = 1 mA, IB = 0 VCB = 25 V, IE = 0 VEB = 4 V, IC = 0 VCE = 10 V, IC = 1.0 A IC = 1.0 A, IB = 1.0 mA IC = 1.0 A, IB = 1.0 mA 6 500 Min 50 50 Typ Max 85 85 1 2 40 000 1.8 2.2 V V Unit V V A mA 3.050.1 Publication date: June 2002 SJD00239AED 1 2SD2018 PC Ta 6 (1) With a 100 x 100 x 2 mm Al heat sink (2) Without heat sink 2.4 VCE = 10 V TC = 25C 2.0 90 A 80 A 70 A 1.2 60 A 50 A 0.8 40 A IC VCE Collector to emitter saturation voltage VCE(sat) (V) 1 000 VCE(sat) IC IC / IB = 1 000 Collector power dissipation PC (W) 5 4 Collector current IC (A) 100 1.6 IB = 100 A 3 (1) 2 (2) 1 10 1 TC = 100C -25C 25C 0.4 30 A 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.1 0.01 0.03 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) IC 1 000 hFE IC 106 VCE = 10 V 24 Cob VCB Collector output capacitance Cob (pF) IE = 0 f = 1 MHz TC = 25C Base to emitter saturation voltage VBE(sat) (V) IC / IB = 1 000 20 100 105 DC current gain hFE TC = 100C 25C -25C 16 10 104 12 TC = -25C 1 25C 100C 8 103 4 0.1 0.01 0.03 0.1 0.3 1 3 10 102 0.01 0 0.03 0.1 0.3 1 3 10 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) 2 SJD00239AED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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